Integrated Current Sensing Device for Micro IDDQ Test
نویسندگان
چکیده
A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI with the conventional CMOS process. The HEMOS is also helpful to establish the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads.
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